http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102052337-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102052337-B1 |
| titleOfInvention | Substrate treating apparatus and substrate treating method |
| abstract | The present invention relates to a substrate processing apparatus and a substrate processing method. A substrate processing method according to an embodiment of the present invention comprises the steps of selectively etching the silicon nitride film for polysilicon, supplying water vapor into the chamber provided with the substrate to form a water vapor layer around the substrate; And etching the silicon nitride film selectively by supplying a process gas containing fluorine into the chamber after the vapor layer forming step. |
| priorityDate | 2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.