http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102029647-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N15-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2014-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102029647-B1 |
| titleOfInvention | Defect density evaluation method for silicon single-crystal substrate |
| abstract | This invention is a method of evaluating the defect density | concentration produced | generated in the silicon single crystal substrate by irradiation of a particle beam, after measuring the resistivity of the said silicon single crystal substrate, and irradiating the said particle beam to this silicon single crystal substrate, after this irradiation, The resistivity of the silicon single crystal substrate is measured again, and from the measurement results of the resistivity before and after the irradiation of the particle beam, the carrier concentration in the silicon single crystal substrate before and after the irradiation is determined, respectively, and the rate of change of the carrier concentration is calculated. The present invention provides a method for evaluating a defect concentration of a silicon single crystal substrate, which is generated in the silicon single crystal substrate by irradiation of the particle beam, and evaluates the concentration of a VV defect made of silicon atomic vacancy. Thereby, the method which can easily evaluate the density | concentration of the VV defect produced in the silicon single crystal substrate by irradiation of particle beam is provided. |
| priorityDate | 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.