| abstract |
The present invention provides a highly reliable semiconductor device that imparts stable electrical characteristics to a transistor. Further, an oxide material for realizing such a semiconductor device is provided. Each having a c-axis orientation and having at least triangular or hexagonal atomic arrangement when viewed in the direction perpendicular to the ab plane, the upper plane, or the surface to be formed, and in the c axis, Two or more kinds of crystals having different directions of the a axis or the b axis on the ab plane (or the top face or the to-be-formed plane), which are arranged in the form of In 2 SnZn 2 O 7 (ZnO) m (m is 0 or a natural number) Oxide film is used. |