| abstract |
The present invention discloses a method for forming a thin film. This method uses a metal precursor represented by R 3 y M (NR 1 R 2 ) xy or M (OR 1 R 2 ) and a silicon precursor represented by H z Si (NR 4 R 5 ) 4-z . Forming a step. Wherein R 1 , R 2 , R 3 , R 4 and R 5 are each hydrogen or hydrocarbon, R 3 is different from R 1 , R 2 , R 4 and R 5 , and x = 3-5, y = 1 to 4, z = 2 to 3, M is a metal, and the dielectric layer may be a metal silicate or a silicon nitride layer doped with silicon. |