| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate |
2016-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101925687-B1 |
| titleOfInvention |
Semiconductor structure and manufacturing method thereof |
| abstract |
A semiconductor structure according to the present invention includes a conductive structure, a dielectric layer, and a plurality of conductive features. The dielectric layer is present on the conductive structure. The dielectric layer has a plurality of through holes, and at least one through hole exposes the conductive structure. The conductive features reside in through holes, respectively. The at least one conductive feature has a bottom surface and at least one side wall. The bottom and side walls of the conductive feature intersect to form an interior angle. The interior angles of the two neighboring conductive features are less than about three degrees or have substantially the same difference. |
| priorityDate |
2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |