http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101922757-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32779 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101922757-B1 |
| titleOfInvention | Plasma treatment method and plasma treatment apparatus |
| abstract | A plasma processing method for plasma processing a film formed on a substrate (W) by supplying a processing gas into a predetermined plasma processing region and converting the processing gas into plasma in a plasma generating region. The distribution of the in-plane throughput by the plasma treatment of the film formed on the substrate is obtained. Then, on the basis of the obtained distribution of the in-plane throughput, the flow rate of the processing gas supplied to the region for which the processing amount of the plasma processing is to be increased is relatively increased or the processing amount of the plasma processing is supplied to the region The flow rate of the process gas is adjusted so that the flow rate of the process gas is relatively lowered. Then, the processing gas whose flow rate is adjusted is supplied into the predetermined plasma processing region, and the plasma processing is performed on the film formed on the substrate. |
| priorityDate | 2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.