http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101882905-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 |
| filingDate | 2013-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101882905-B1 |
| titleOfInvention | Method of depositing thin film |
| abstract | A method of forming a silicon germanium oxide thin film on a substrate in a reaction space can be performed using an atomic layer deposition (ALD) process. The process may include at least one cycle comprising a germanium oxide deposition sub-cycle and a silicon oxide deposition sub-cycle. The germanium oxide deposition sub-cycle may include contacting the substrate with the germanium reactant, removing the excess germanium reactant, and contacting the substrate with the first oxygen reactant. The silicon oxide deposition sub-cycle includes contacting the substrate with a silicon reactant, removing the excess silicon reactant, and contacting the substrate with a second oxygen reactant. The films of the present disclosure exhibit etch rates that are relatively favorable to thermal oxides. Depending on the composition of the films, the etch rates may be higher or lower than the etch rates of the thermal oxide. |
| priorityDate | 2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.