| abstract |
An object of the present invention is to provide an analyzing apparatus for a silicon substrate capable of highly accurately analyzing impurities such as trace metals in a silicon nitride substrate having a thick film or an oxide film formed thereon by ICP-MS. In order to solve the above problems, an analysis apparatus for a silicon substrate according to the present invention is characterized by comprising: an analysis scan port having a rod port, a substrate transport robot, an aligner, a drying chamber, a gas phase decomposition chamber, And an analysis means for performing inductively coupled plasma analysis, wherein the silicon substrate having the oxide film or the nitride film formed thereon is swept over the surface of the silicon substrate with a high concentration recovery solution by means of a substrate analysis nozzle, and the recovered high concentration recovery solution After discharging onto the surface of the substrate, it is heated and dried, and the surface of the silicon substrate is swept away by the analytical liquid, and the analytical solution is analyzed by ICP-MS. |