http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101853802-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 |
| filingDate | 2011-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101853802-B1 |
| titleOfInvention | Conformal layers by radical-component cvd |
| abstract | Methods and materials for forming conformal dielectric layers (e.g., silicon-nitrogen-hydrogen (Si-NH) films) containing silicon and nitrogen from carbon-free silicon- and-nitrogen precursors and radical- Systems are disclosed. The carbon-free silicon-and-nitrogen precursors are mostly excited by contact with radical-nitrogen precursors. Since the silicon-and-nitrogen film is formed without carbon, the conversion of the film to the cured silicon oxide is accomplished with less pores and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partly converted to silicon oxide, which allows the optical properties of the conformal dielectric layer to be selectable. Deposition of thin silicon-and-nitrogen-containing films may be performed at low temperature to form a liner layer within the substrate trench. The low temperature liner layer has been found to improve the wetting properties and allow the flowable films to more fully fill the trenches. |
| priorityDate | 2010-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.