http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101843601-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2011-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101843601-B1 |
| titleOfInvention | Method for forming resist pattern and radiation-sensitive resin composition |
| abstract | The present invention provides a resist pattern forming method using a developer containing an organic solvent, which can suppress film reduction after pattern formation of a resist film, and can form a resist pattern excellent in CDU and MEEF, And a method for forming a resist pattern using the same. The present invention relates to a resist pattern forming method comprising (1) a resist film forming step of applying a radiation-sensitive resin composition onto a substrate, (2) an exposure step, and (3) a resist pattern having a developing process using a developer containing 80% Wherein the radiation-sensitive resin composition has a weight average molecular weight of [A] in terms of polystyrene of more than 6,000, a content of a structural unit containing an acid-dissociable group and a content of a structural unit containing a hydroxyl group of less than 5 mol% A polymer, and a [B] radiation-sensitive acid generator. |
| priorityDate | 2010-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 448.