http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101837648-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2010-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101837648-B1 |
| titleOfInvention | Insitu ozone cure for radicalcomponent cvd |
| abstract | Methods of forming a dielectric layer are described. Such methods include mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on the substrate. The silicon-and-nitrogen-containing layers are converted into silicon-and-oxygen-containing layers by curing in an ozone-containing atmosphere in the same substrate processing region used to deposit the silicon- and-nitrogen-containing layers. Other silicon-and-nitrogen-containing layers may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may all be cured again in the ozone without removing the substrate from the substrate processing region. After the deposition-cure cycle of an integer multiple, the transformer of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment. |
| priorityDate | 2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.