| abstract |
In the present application, a composition or formulation for forming a film in a semiconductor deposition process, such as, but not limited to, flowable chemical vapor deposition of silicon oxide, is described. Also contemplated herein are acetylenic alcohols and diols or other types of surfactants such as, but not limited to, 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9- 5-dodecene-4,7-diol, 4-ethyl-1-octin-3-ol, 2,5-dimethylhexane-2,5-diol, 2,4,7,9-tetramethyl- 4,7-diol, 2,5,8,11-tetramethyl-6-dodecyne-5,8-diol, 2,6-dimethyl-4-heptanol, N, N'- -Dimethylbutyl) ethylenediamine, diisopentyltartrate, 2,4,7,9-tetramethyl-4,7-decanediol, and combinations thereof to improve surface wettability. |