| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2013-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101808209-B1 |
| titleOfInvention |
Method of enabling seamless cobalt gap-fill |
| abstract |
Methods are provided for depositing a contact metal layer within contact structures of a semiconductor device. In one embodiment, a method is provided for depositing a contact metal layer to form a contact structure in a semiconductor device. The method includes performing a cyclic metal deposition process to deposit a contact metal layer on the substrate, and annealing the contact metal layer disposed on the substrate. The periodic metal deposition process includes exposing a substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing a portion of the contact metal layer to a plasma treatment process, Exposing the substrate to a deposition precursor gas mixture until the contact metal layer is achieved, and repeating the step of exposing a portion of the contact metal layer to a plasma treatment process. |
| priorityDate |
2012-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |