| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2015-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101791752-B1 |
| titleOfInvention |
Stacked device and associated layout structure |
| abstract |
The lamination devices and circuits formed by the lamination devices are described. According to some embodiments, the semiconductor posts extend vertically from the substrate. The first source / drain region is in the semiconductor post. The first gate electrode layer laterally surrounds the semiconductor posts and is perpendicular to the first source / drain regions. A first gate dielectric layer is interposed between the first gate electrode layer and the semiconductor posts. The second source / drain region is in the semiconductor post and is in the vertical direction above the first gate electrode layer. The second source / drain region is connected to the power supply node. The second gate electrode layer laterally surrounds the semiconductor posts and is perpendicular to the second source / drain regions. A second gate dielectric layer is interposed between the second gate electrode layer and the semiconductor posts. The third source / drain region is in the semiconductor post and is in the vertical direction above the second gate electrode layer. |
| priorityDate |
2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |