http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101764166-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101764166-B1 |
| titleOfInvention | Silicon-selective dry etch for carbon-containing films |
| abstract | Methods of etching silicon and carbon containing materials are described, which include SiConi etching with the flow of active oxygen. Prior to SiConi ™ etching, active oxygen can be introduced, which reduces the carbon content within adjacent surface areas and makes the SiConi ™ etching proceed faster. Alternatively, during SiConi ™ etching, active oxygen may be introduced which further improves the effective etch rate. |
| priorityDate | 2009-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.