| abstract |
A method of forming a silicon nitride film at low temperature using an atomic layer deposition method and an atomic layer deposition apparatus therefor are disclosed. In the thin film formation method of the silicon nitride film, a silicon precursor of silicon-based silicon containing source gas is used, N2 gas activated by direct plasma is used as the reaction gas, N2 gas or inert gas (Si 3 N 4 ) may be formed by sequentially using the source gas, the purge gas, the reactive gas, and the purge gas in this order. |