| abstract |
One object of the present invention is to provide an oxide semiconductor suitable for use in a semiconductor device. Or a semiconductor device using the same. An In-Ga-ZnO based oxide semiconductor layer as a semiconductor device used for a channel formation region of the transistor, the oxide-based semiconductor layer In-Ga-ZnO is, InGaO 3 represented by (ZnO) m (m> 0 ) (M = 1) of InGaO 3 (ZnO) m in the amorphous structure. |