| abstract |
The present invention relates to a method for controlling the thickness of a two-dimensional material thin film using a crystal growth derivative and a solvent. More particularly, the present invention relates to a method for controlling a thickness of a two- Precursor are added to each other to form a two-dimensional material thin film by a chemical vapor deposition method, whereby a thin film can be made large-sized and a thin film having a single layer or a multilayer structure can be formed and the process can be easily performed. Instead of a toxic gas, a chalcogenide precursor The present invention can be applied to a semiconductor active layer of a transistor, a high performance integrated circuit, a field effect transistor, a catalyst electrode of a hydrogen evolution reaction, an electrode of a lithium ion battery, a sensor, a light sensing device, a flexible device and a capacitor And crystal growth derivatives that can be used for components such as Dimensional material thin film. |