http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101698626-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3424 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L65-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D161-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2012-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101698626-B1 |
| titleOfInvention | Resist protective film-forming composition and patterning process |
| abstract | [MEANS FOR SOLVING PROBLEMS] A resist protective film material used in a pattern forming method by lithography in which a protective film made of a resist protective film material is formed on a photoresist layer formed on a wafer, Wherein a novolak resin of a bisphenol compound represented by the following formula is used as a base resin. (Wherein R ? Is the same or different kinds of hydrogen atoms, alkyl groups, alkenyl groups or aryl groups, R ? Is a single bond or a 2n-valent hydrocarbon group and may have an aromatic group, and n represents an integer of 1 to 4. R ? Is a single bond or an alkylene group, and may have an aromatic group, and p and q each represent an integer of 1 to 3.) [Effect] By applying the resist protective film material of the present invention, it is possible to prevent the T-top of the resist pattern due to amine contamination in the air and to increase the sensitivity of the resist film by an increase effect on the resist film have. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102078895-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170003455-A |
| priorityDate | 2011-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 339.