http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101691254-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
| filingDate | 2014-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101691254-B1 |
| titleOfInvention | Pattern forming process, and pattern reversal film forming material |
| abstract | The present invention relates to a chemically amplified resist material containing, on a substrate to be processed, a resin whose dissolution rate in an organic solvent developer is lowered by an acid, a photoacid generator which generates an acid by exposure to a high energy beam, and an organic solvent (PEB), and the resist film is developed with an organic solvent to obtain a negative pattern. The resist pattern is then patterned by irradiating the resist film with ultraviolet rays such as silicon, titanium, zirconium, hafnium and aluminum It is another object of the present invention to provide a pattern forming method for performing image reversal by applying a solution containing an element and converting the negative pattern into a positive pattern by prebaking and dry etching. According to the present invention, a positive pattern such as a high aspect dot pattern can be obtained without collapse of the pattern. |
| priorityDate | 2013-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 410.