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filingDate 2008-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101677281-B1
titleOfInvention A semiconductor device and a method of making a semiconductor device
abstract A semiconductor wafer includes a substrate having a plurality of active elements formed thereon. An analog circuit is formed on the substrate. The analog circuit may be an inductor, a metal-insulator-metal capacitor, or a resistor. The inductor is made of copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited on the TSV in electrical contact with the analog circuitry. Under bump metallization (UBM) is formed on the substrate backside in electrical contact with the TSV. A solder material is deposited on the UBM layer. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on the substrate surface. n n Semiconductor device, circuit element, wafer, interconnect structure, solder bump, solder ball
priorityDate 2007-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 41.