| abstract |
A method of producing a silicon-containing thin film by thermal polymerization of a reactive gas mixture comprising bisaminosilacyclobutane, and a feed gas selected from a nitrogen feed gas, an oxygen feed gas, and mixtures thereof, is described. The deposited film may be silicon nitride, silicon carbonitride, silicon dioxide, or carbon-doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and / or stressors in semiconductor devices. |