http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101630654-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101630654-B1 |
| titleOfInvention | Etching method, and method of producing semiconductor substrate product and semiconductor device using the same |
| abstract | And a step of etching the TiN-containing layer by applying an etching solution to the TiN-containing layer in the semiconductor substrate, wherein the etching solution contains water, a basic compound in the water and an oxidizing agent in a range of pH 8.5 to 14, And the surface oxygen content is 0.1 mol% to 10 mol%. |
| priorityDate | 2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.