http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101630028-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7809 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2014-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101630028-B1 |
| titleOfInvention | Methods of manufacturing aluminium-indium zinc oxide semiconductor thin film transistor using pdms passivatinion layer and aluminium-indium zinc oxide semiconductor thin film transistor manufactured by the methods |
| abstract | A method of manufacturing an aluminum-indium zinc oxide semiconductor thin film transistor is disclosed. In the aluminum-indium zinc oxide semiconductor thin film transistor, a gate electrode is formed on a substrate, and a gate insulating film is formed on the substrate to cover the gate electrode. A precursor solution in which a zinc precursor, an indium precursor, and an aluminum precursor are dissolved is coated on the gate insulating film to form a semiconductor active layer, and then a source electrode and a drain electrode are formed on the semiconductor active layer. |
| priorityDate | 2014-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 91.