http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101582773-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2015-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101582773-B1 |
| titleOfInvention | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| abstract | An object of the present invention is to form a thin film containing a predetermined element such as a silicon film in a low temperature region. A step of forming a first layer containing a predetermined element and a halogen group by supplying a first raw material containing a predetermined element and a halogen group to a substrate; and a step of supplying a second raw material containing a predetermined element and an amino group to the substrate, A step of performing a predetermined number of cycles including a step of forming a second layer by modifying the first layer, wherein in the step of performing the cycle a predetermined number of times, the temperature of the substrate is changed from a predetermined element in the second raw material to And the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer and prevents the separated ligand from binding with the predetermined element in the first layer Temperature, and the predetermined element from which the ligand in the second raw material is separated binds to a predetermined element in the first layer. |
| priorityDate | 2012-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 102.