http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101574232-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02359 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101574232-B1 |
| titleOfInvention | Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium |
| abstract | The present invention forms a thin film having a low dielectric constant with excellent etching resistance. Forming a thin film including a first impurity containing water and chlorine and a second impurity containing a hydrocarbon compound on a substrate; Removing the first impurity including the moisture and the chlorine from the thin film by heat-treating the thin film at a first temperature higher than the temperature of the substrate in the step of forming the thin film; And heat treating the thin film at a second temperature higher than the first temperature to remove the second impurity containing the hydrocarbon compound from the thin film after the heat treatment at the first temperature. |
| priorityDate | 2013-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 109.