http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101564473-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32138
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2008-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101564473-B1
titleOfInvention Method of controlling etch microloading for a tungsten-containing layer
abstract A method is provided for etching features of different aspect ratios in a tungsten-containing layer. An etching gas containing a tungsten etching component and a deposition component is provided. A plasma is formed from the provided etching gas. A tungsten-containing layer patterned with a wide feature and a narrow feature is etched by the provided plasma.
priorityDate 2007-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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