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Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2013-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101559816-B1
titleOfInvention Method of manufacturing a semiconductor device, substrate processing apparatus and recording medium
abstract The present invention forms a thin film containing a predetermined element such as a silicon film in a low temperature region. Forming a first layer containing the predetermined element and the halogen group by supplying a first raw material containing a predetermined element including a semiconductor element or a metal element and a halogen group to the substrate; And a second raw material containing the predetermined element and the amino group on the substrate and having a number of ligands containing an amino group in one molecule of not more than 2 and not more than the number of ligands containing a halogen group in one molecule of the first raw material, And a step of forming a second layer composed of the predetermined element by modifying the first layer by supplying the predetermined element group to the substrate, Is formed.
priorityDate 2012-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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