| abstract |
The present invention is to realize the film quality superior to the conventional film quality by modifying the conventional film type. Supplying a gas containing a first element under a condition in which a CVD reaction occurs in a processing container accommodating a substrate, thereby forming a first layer comprising a first element of several atomic layers or less on the substrate; By supplying a gas containing a second element different from the first element into the processing vessel, the first layer is reformed without saturating the reforming reaction by the gas containing the second element of the first layer. The process for forming the second layer including the first element and the second element is performed as one cycle, and the cycle is repeated a plurality of times, thereby including the first element and the second element having a predetermined composition and a predetermined film thickness on the substrate. There is provided a method of manufacturing a semiconductor device, comprising the step of forming a thin film. |