| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78636 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2014-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101522860-B1 |
| titleOfInvention |
Semiconductor device |
| abstract |
The present invention proposes a method of easily fabricating a semiconductor device that prevents a gap or disconnection of a film thickness of a source electrode or a drain electrode. A semiconductor device comprising: a semiconductor layer formed on an insulating substrate; a first insulating layer formed on the semiconductor layer; a gate electrode formed on the first insulating layer; and a second insulating layer formed on the gate electrode, An opening reaching the semiconductor layer formed on the insulating layer, and a step formed on the side surface of the second insulating layer in the opening. |
| priorityDate |
2007-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |