| abstract |
In the semiconductor device and the manufacturing method thereof, the step of forming the insulating film used as the passivation film is simplified. A first step of forming a first electrode (15a) on a semiconductor substrate (1) and, on the first semiconductor substrate (1), the has a first viscosity V 1 in the first temperature T 1, the more the first temperature T 1 a higher second temperature T 2 a first viscosity V 1 lower than the second viscosity V 2 to have a second temperature T 2 higher third temperature T 3 a second viscosity higher third viscosity V 3 than V 2 in a more in And a step of curing the insulating material 30 to form the first insulating film 31. The step of forming the first insulating film 31 is a step of forming the insulating material 30, a first heating process and the insulating material 30 to the second viscosity V 2 is heated to the first condition to the second condition a step of the third viscosity V 3, temperature rise in the first condition and the second condition rate Is different from that of the conventional semiconductor device. |