http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101445299-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101445299-B1 |
| titleOfInvention | A pulsed plasma system having a pulsed sample bias for etching a semiconductor structure |
| abstract | A pulsed plasma system having a pulsed sample bias for etching a semiconductor structure is disclosed. In one embodiment, a portion of the sample is removed by application of a pulsed plasma process, and the pulsed process process includes a plurality of duty cycles. The negative bias is applied to the sample during the ON state of the duty cycle, while the zero bias is applied to the sample during the OFF state of the duty cycle, respectively. In another embodiment, the first portion of the sample is removed by application of a continuous plasma process. The continuous plasma process is then terminated and the second portion of the sample is removed by application of a pulsed plasma process. |
| priorityDate | 2007-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.