abstract |
The present invention provides a method of manufacturing a semiconductor device comprising the steps of forming an insulating film (38, 40, 42) made of a silicon compound insulating material on a substrate (10), a step of forming an opening (48) A step of forming a barrier layer 50 made of crystalline SiC on the inner surface of the opening 48 by irradiating an active energy ray in an atmosphere containing a hydrocarbon-based gas, and a step of forming an opening 48 in which the barrier layer 50 is formed, And a step of forming a wiring structure 52 made of copper. |