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filingDate 2013-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cca94baa7444c4666baa1ad9cef18e1
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publicationDate 2014-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101439030-B1
titleOfInvention Method of forming a pattern structure
abstract In the method for forming the task structure, a graphene thin film pattern is formed on the etching target layer. Thereafter, the target layer pattern may be formed by partially etching the etching target layer using the graphene thin film pattern as an etching mask.
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Total number of triples: 33.