Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-182 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate |
2013-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cca94baa7444c4666baa1ad9cef18e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_730943f2cc84b221518b1a78f81fc65f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4beb6896ef74516c5f5b23af0ffb032 |
publicationDate |
2014-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-101439030-B1 |
titleOfInvention |
Method of forming a pattern structure |
abstract |
In the method for forming the task structure, a graphene thin film pattern is formed on the etching target layer. Thereafter, the target layer pattern may be formed by partially etching the etching target layer using the graphene thin film pattern as an etching mask. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10495972-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170325-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11086223-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10808142-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10133176-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10685844-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153163-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10331033-B2 |
priorityDate |
2013-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |