| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2010-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101431890-B1 |
| titleOfInvention |
Discontinuous thin semiconductor wafer surface features |
| abstract |
The semiconductor wafer has a semiconductor substrate and films on the semiconductor substrate. The semiconductor substrate and / or films have at least one etch line that produces a discontinuity that reduces residual stresses in the semiconductor wafer. Reducing the residual stresses in the semiconductor wafer reduces warpage of the wafer when the wafer is thinned. Additionally, an isolation plug may be used to fill a portion of the etch lines to prevent shorting of the layers. |
| priorityDate |
2009-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |