| abstract |
An embodiment of the present invention relates to a semiconductor device and a die bonding structure thereof, and a technical problem to be solved is to improve electrical conductivity and mechanical characteristics by not forming an intermetallic compound with a semiconductor die or a lead frame, And to provide a semiconductor device and its die bonding structure capable of reducing the aggregation phenomenon. To this end, the invention comprises a semiconductor die; A barrier layer formed on the surface of the semiconductor die; A first metal layer formed on the barrier layer; A middle metal layer formed on the first metal layer; And a second metal layer formed on the middle metal layer, wherein the first and second metal layers have a first melting temperature and the second metal layer has a second melting temperature lower than the first melting temperature, and a die bonding structure thereof do. |