| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_76a565583168bff5be5cf6040bfaa6e4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2013-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_863418f817ff0974a671485edadb219c |
| publicationDate |
2014-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101418304-B1 |
| titleOfInvention |
Doping method for metal oxide with F by using teflon and manufacturing method of oxide semiconductor using the same |
| abstract |
The present invention relates to a fluorine doping method of a metal oxide using Teflon and a method of manufacturing an oxide semiconductor using the same, and is for precisely controlling a doping level of fluorine ions to a metal oxide which is a doping object to 10 18 / cm 3 or less. The present invention relates to a doping method for doping fluorine ions generated by applying a plasma to Teflon to a metal oxide as an object to be doped, and a method for doping fluorine ions into a metal oxide to form an oxide semiconductor Of the present invention. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016085251-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107369766-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107369766-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101595309-B1 |
| priorityDate |
2013-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |