http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101402147-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49d442475667956f38b73d9ae60830e5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2014-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c74b3ddca7764ae5d1efc2a59b360c15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c48b366d2ab9ee26f0d9b04296372ee8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d07893451c1812d3c502c3120a315bd5 |
| publicationDate | 2014-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101402147-B1 |
| titleOfInvention | Gallium nitride-based semiconductor device, manufacturing method thereof, and power module including the same |
| abstract | A gallium nitride based semiconductor device according to the present invention includes: a source ohmic layer and a drain ohmic layer formed on a first surface of a substrate; A gate electrode formed on the first surface of the substrate between the source ohmic layer and the drain ohmic layer; A source electrode and a drain electrode connected to the source ohmic layer and the drain ohmic layer, respectively; A source pad and a drain pad formed on the source electrode and the drain electrode, respectively; And a source ground electrode conformally formed on a sidewall of the substrate from a side wall of the source pad and extending to a second side of the substrate, wherein the source electrode vertically overlaps the gate electrode. The present invention also provides a power module including the gallium nitride-based semiconductor device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112802802-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112802802-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112750898-A |
| priorityDate | 2014-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.