http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112802802-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate | 2021-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112802802-B |
| titleOfInvention | Semiconductor power device based on SU-8 photoresist adhesive, preparation method thereof, and power module including the same |
| abstract | A semiconductor power device based on SU-8 photoresist, a preparation method thereof, and a power module including the same, the present invention aims to solve the problem that when an inorganic insulating material protective layer is formed by a plasma deposition or etching process in an existing semiconductor power device, the epitaxial layer is easily removed. Problems such as crack damage occur. In the semiconductor power device of the present invention, a semiconductor stack structure is formed on a substrate, and a source electrode and a drain electrode are arranged in isolation from each other on the semiconductor stack structure; gate; the first passivation layer is arranged between the gate and the semiconductor stack structure, the second passivation layer is formed on the stack structure of the gate and the semiconductor layer, the first passivation layer and the second passivation layer are both Including photoresist. The semiconductor power device of the present invention includes a passivation layer of photoresist, which can prevent the device from being damaged by plasma or etching process. |
| priorityDate | 2021-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.