http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101399681-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C381-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C309-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C381-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C309-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2010-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101399681-B1 |
| titleOfInvention | Sulfonium salt, resist material and pattern forming method |
| abstract | The present invention provides a sulfonium salt represented by the following general formula (1) Wherein R 1 represents a fluorine atom or a C1-10 alkylene group or a C6-10 arylene group which may be substituted by another hetero atom and R 2 represents a methyl group, a tert-butyl group, a methoxy group, or a tert-butoxy group M represents 0 to 5, and n represents 0 to 4, and also represents a linking group or direct bond of an oxygen atom, methylene, or sulfone with a different benzene ring. The sulfonium salt of the present invention has low acceptability in liquid immersion lithography and effectively cuts acid labile groups in a chemically amplified positive resist composition by irradiation with high energy radiation and in the case of chemically amplified negative resist materials, Can be efficiently performed, and volatilization can be reduced. Therefore, since it is difficult to volatilize under high vacuum conditions such as when EB or EUV exposure is performed, the possibility of contamination of the exposure apparatus is low. Therefore, it is very useful as a photoacid generator of a chemically amplified resist material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200136325-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102468569-B1 |
| priorityDate | 2009-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 365.