http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101392838-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101392838-B1 |
| titleOfInvention | Atomic layer etching using pulsed plasma |
| abstract | A system and method for rapid atomic layer etching (ALET) comprises: a pulsed plasma source having a helical coil electrode, a cooled Faraday shield, a counter electrode disposed on top of the tube, and a gas inlet; And a reaction chamber comprising a substrate support and a boundary electrode. The method includes disposing an etchable substrate in a plasma etch chamber; Forming a product layer on the surface of the substrate; Removing a portion of the product layer by pulsing the plasma source, and forming the etched substrate by repeating the steps of forming the product layer and removing a portion of the product layer. |
| priorityDate | 2009-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.