http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101372356-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32385 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101372356-B1 |
| titleOfInvention | Plasma Treatment Method |
| abstract | The present invention relates to a plasma processing method capable of removing thin films or particles deposited on a semiconductor substrate edge region, the method comprising: seating a central region of a substrate on a substrate support in a plasma processing apparatus; Introducing a process gas into the plasma processing apparatus; Forming a plasma in the plasma processing apparatus to process the target element species on the outer circumferential region of the substrate; and heating the substrate before forming the plasma. Plasma can be generated and a uniform high density plasma can be concentrated in the edge region of the substrate to improve the etching ability of the substrate end.n n n n Etch, Substrate Edge, Wafer, Plasma Treatment |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105655221-A |
| priorityDate | 2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.