http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101369993-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2007-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101369993-B1 |
| titleOfInvention | Low energy and safe handling of large amounts of arsenic, phosphorus, and boron implanted wafers |
| abstract | A method of preventing the formation of toxic gases after the injection process is disclosed. When injected into a film disposed on a substrate, certain dopants may react to form toxic and / or combustible gases when exposed to moisture. By exposing the film doped with the oxygen containing compound in-situ, the dopants shallowly injected into the layer stack react to form dopant oxides, thereby avoiding potential toxic and / or flammable gas formation. Decrease. Alternatively the capping layer may be formed in-situ on the injected film to reduce the potential generation of toxic and / or combustible gases. |
| priorityDate | 2006-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 122.