http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101346897-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2007-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101346897-B1 |
| titleOfInvention | Etching Methods and Plasma Processing Systems |
| abstract | The present invention discloses a method of pretreating the mask layer prior to etching the thin film of the base. Thin films such as dielectric films are etched using plasma supported by ballistic electron beams. To reduce the loss of pattern clarity, such as the Line Edge Roughness (LER) effect, prior to performing the etching process, the oxygen-containing plasma, or halogen-containing plasma, or rare gas plasma, or a combination of two or more thereof. The mask layer is processed. |
| priorityDate | 2006-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.