| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2011-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101333352-B1 |
| titleOfInvention |
Etching method and apparatus |
| abstract |
When etching the insulating film formed in the board | substrate, the etching method which can prevent the bad influence of oxygen plasma from generate | occur | producing under an insulating film is provided. According to the etching method of the present invention, the insulating film 222 is exposed to the plasma-processed processing gas to etch the insulating film 222 to the middle in the thickness direction, and the insulating film 222 remaining after the end of the first etching step. ) Is exposed to oxygen plasma to remove the deposits deposited on the surface of the remaining insulating film 222, and the remaining insulating film 222 is exposed to the plasma treatment process to expose the remaining insulating film 222. And a second etching step of etching. |
| priorityDate |
2010-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |