http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101330650-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101330650-B1 |
| titleOfInvention | Etching method |
| abstract | Provided is an etching method capable of forming trenches or via holes having a desired aspect ratio and shape with respect to a workpiece to be made of silicon. Etching process using hydrogen halide containing gas which introduces a hydrogen halide containing gas into the vacuum chamber 1, and etches the silicon substrate 9, and etches the silicon substrate 9 by introducing a fluorine containing gas into the vacuum chamber 1; The etching process using a fluorine-containing gas, the protective film forming process of sputtering the solid material 15, and forming a protective film on the silicon substrate 9, and applying a high frequency bias power to the board | substrate electrode 8, and remove a part of protective film. It has a protective film removal process, and a fluorine-containing gas use etching process, a protective film formation process, and a protective film removal process are repeated in this order. |
| priorityDate | 2009-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.