http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101329954-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-143 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2009-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101329954-B1 |
| titleOfInvention | Resist material, resist protective film material, and pattern formation method |
| abstract | The present invention provides a polymer compound (A) obtained by copolymerization of a monomer (1a) having hexafluoroalcohol in a side chain and a monomer (1b) in which a hydroxyl group of a hexafluoroalcohol of a side chain is protected, for photoresist for immersion lithography. It is used as an additive material and a resist protective film material.n n n n n n n n (In formula, R < 1> represents a hydrogen atom, a fluorine atom, a C1-C4 linear or branched alkyl group, or a fluorinated alkyl group, R < 2a> and R < 2b> are a hydrogen atom or a C1-C10 linear, A branched or cyclic alkyl group is represented, R < 3> represents a C1-C10 linear, branched or cyclic alkyl group, or an acid labile group, and 0 <a1 <1, 0 <a2 <1, and 0 <a1 + a2≤1)n n n The resist material and resist protective film material using the high molecular compound (A) in this invention are excellent in the water repellency and water repellency in immersion lithography, and can implement favorable lithography performance with few development defects.n n n Monomer with hexafluoroalcohol in the side chain, monomer in which hydroxyl group of hexafluoroalcohol in side chain is protected, additive material for photoresist for immersion lithography, resist protective film |
| priorityDate | 2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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