| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2007-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101329285-B1 |
| titleOfInvention |
Fabrication of High Quality Dielectric Films of Silicon Dioxide for STI: Use of Different Siloxane-Based Precursors for Half II-Remote Plasma Enhanced Deposition Processes |
| abstract |
A method of depositing a dielectric layer in a gap formed on a substrate is described. Such methods include introducing an organo-silicon precursor and an oxygen precursor into the deposition chamber. The organo-silicon precursor has a C: Si atomic ratio of less than 8, and the oxygen precursor includes atomic oxygen generated outside of the deposition chamber. The precursor reacts to form a dielectric layer in the gap. Also described is a method of filling the gap with a dielectric material. This method includes providing an organo-silicon precursor and an oxygen precursor having a C: Si atomic ratio of less than 8 and forming a plasma from the precursors to deposit a first portion of the dielectric material in the gap. The dielectric material may be etched and a second portion of the dielectric material may be formed in the gap. The first portion and the second portion of the dielectric material may be annealed. |
| priorityDate |
2006-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |