http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101327640-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2006-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101327640-B1 |
| titleOfInvention | Dielectric Film Formation Method and Novel Precursor Implementing the Method |
| abstract | The present invention relates in particular to a low dielectric constant dielectric layer (of the BEOL portion of the circuit) used to isolate metal interconnects during the manufacture of integrated circuit boards. According to the invention, the dielectric layer comprises SiC and / or SiOC and is obtained from at least one precursor containing at least one -Si-C n -Si-chain, wherein n is at least one.n n n n Metal interconnect isolation, low dielectric constant layer, low dielectric film |
| priorityDate | 2005-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.