http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101313124-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2006-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101313124-B1 |
| titleOfInvention | Method for manufacturing thin film transistor, display device using thin film transistor, and electronic device provided with the display device |
| abstract | In forming the thin film transistor, an insulating film having a higher quality than the insulating film formed by the conventional CVD method is formed, and an insulating film having a quality equal to or higher than that of the insulating film formed by heat treatment at a high temperature by the thermal oxidation method does not affect the glass substrate. Is obtained from temperature. Plasma oxidation or plasma nitridation at the pore temperature and high electron density is performed by using a glass substrate, a semiconductor film containing amorphous silicon formed in a predetermined pattern, a gate electrode and wirings extending from the gate electrode, an insulating film serving as a gate insulating film, and a protective film. For at least one, the temperature of the glass substrate is carried out under conditions set to a temperature of at least 100 ° C. lower than the strain point temperature of the glass substrate.n n n n Thin film transistors, insulating films, plasma oxidation, plasma nitride |
| priorityDate | 2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.